Experimental extraction and model evaluation of base and collector current RF noise in SiGe HBTs

This work presents experimental extraction of intrinsic base and collector current noise of SiGe HBTs as well as their correlation. Using the extraction results, several widely used noise models are evaluated, including the conventional SPICE model, the Van Vliet model, and the transport noise model...

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Bibliographic Details
Main Authors: Guofu Niu, Kejun Xia, Sheridan, D., Harame, D.L.
Format: Conference Proceeding
Language:English
Subjects:
Applied sciences
Circuit noise
Current measurement
Electronics
Equivalent circuits
Exact sciences and technology
Germanium silicon alloys
Heterojunction bipolar transistors
Noise measurement
Radio frequency
Scattering parameters
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon germanium
SPICE
Transistors
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Description
Summary:This work presents experimental extraction of intrinsic base and collector current noise of SiGe HBTs as well as their correlation. Using the extraction results, several widely used noise models are evaluated, including the conventional SPICE model, the Van Vliet model, and the transport noise model. Connections and differences between various models are discussed.
ISSN:1529-2517
2375-0995
DOI:10.1109/RFIC.2004.1320696