Direct bonding of recessed-structure SAW filter on silicon substrate

A procedure for fabricating a recessed surface acoustic wave (SAW) device coupled with silicon substrate is reported. The recessed structure is stable and rugged enough against the bonding process, and it can be applied to integrate a semiconductor device into one chip by a direct bonding technique....

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Bibliographic Details
Published in:IEEE transactions on ultrasonics, ferroelectrics, and frequency control ferroelectrics, and frequency control, 2004-07, Vol.51 (7), p.913-916
Main Authors: Tsai, Shih-Hung, Wang, Na-Fu, Horng, Jui-Hong, Houng, Mau-Phon, Wang, Yeong-Her
Format: Article
Language:English
Subjects:
Bonding
Devices
Fabrication
Ferroelectric materials
Ocean temperature
SAW filters
Sea surface
Semiconductor devices
Silicon
Silicon substrates
Substrates
Surface acoustic waves
Surface contamination
Surface treatment
Tensile strength
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Summary:A procedure for fabricating a recessed surface acoustic wave (SAW) device coupled with silicon substrate is reported. The recessed structure is stable and rugged enough against the bonding process, and it can be applied to integrate a semiconductor device into one chip by a direct bonding technique. In this paper, the tensile strength of silicon (Si)-to-recessed-SAW filter is measured, and the performance of the device is discussed.
ISSN:0885-3010
1525-8955
DOI:10.1109/TUFFC.2004.1320752