Photoluminescence studies of exciton recombination and dephasing in single InGaN quantum dots

• Published in: IEEE transactions on nanotechnology 2004-09, Vol.3 (3), p.343-347
• Main Authors: Rice, J.H., Robinson, J.W., Smith, J.D., Jarjour, A., Taylor, R.A., Oliver, R.A., Briggs, G.A.D., Kappers, M.J., Yasin, S., Humphreys, C.J.
• Format: Article
• Language: English
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Exact sciences and technology; Excitons; Iii-v semiconductors; Nanostructures; Nanotubes; Optical control; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures; Photoluminescence; Physics; Quantum computing; Quantum dots; Radiative recombination; Ultrafast optics; US Department of Transportation
• ISSN: 1536-125X; 1941-0085
• DOI: 10.1109/TNANO.2004.828567

This paper reports on time-integrated and time-resolved microphotoluminescence (/spl mu/-PL) measurements of single InGaN quantum dots (QDs). The linewidths of the /spl mu/-PL peaks originating from single metal-organic vapor phase epitaxy-grown III/V InGaN QDs are measured, implying dephasing times of at least 5 ps. Temporal fluctuations of the QD emission energy are observed, and these are explained in terms of randomly generated local electric fields inducing a Stark shift in the optical emission of the InGaN QDs. Time-resolved measurements demonstrate that decay dynamics from single InGaN QDs are exponential in nature. Measurements of the effect of temperature upon the recombination times in individual InGaN QDs have been performed from 4 to 60 K.