A novel fully self-aligned process for high cell density trench gate power MOSFETs

A novel self-aligned process for high cell density trench gate power MOSFETs with only four mask layers was proposed. The specific on-resistance can be as low as 0.21 m/spl Omega/.cm/sup 2/ With 1.5 /spl mu/m cell pitch and 35 V breakdown voltage. Because this process shrinks trench space but not tr...

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Bibliographic Details
Main Authors: TSUI, Bing-Yue, GAN, Tian-Choy, WU, Ming-Da, CHOU, Hui-Hua, WU, Zhi-Liang, SUNE, Ching-Tzong
Format: Conference Proceeding
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Other multijunction devices. Power transistors. Thyristors
Power MOSFETs
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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Summary:A novel self-aligned process for high cell density trench gate power MOSFETs with only four mask layers was proposed. The specific on-resistance can be as low as 0.21 m/spl Omega/.cm/sup 2/ With 1.5 /spl mu/m cell pitch and 35 V breakdown voltage. Because this process shrinks trench space but not trench width, the quasi-saturation phenomenon is lighter. After optimization of the thickness of n- drift layer and n+ substrate, a specific on-resistance lower than 0.1 m/spl Omega/.cm/sup 2/ with 0.6 /spl mu/m technology could be expected.
DOI:10.1109/WCT.2004.239932