Over 65% efficiency 300 MHz bandwidth C-band internally-matched GaAs FET designed with a large-signal FET model

Over 65% efficiency 300MHz bandwidth C-band internally-matched GaAs FET has been developed by using a large-signal FET model. In order to achieve high efficiency in broad-band, optimum impedances at each frequency are estimated by using the large-signal FET model. The large-signal FET model is based...

Full description

Saved in:
Bibliographic Details
Main Authors: Otsuka, H., Mori, K., Yukawa, H., Minamide, H., Kittaka, Y., Tsunoda, T., Ogura, S., Ikeda, Y., Takagi, T.
Format: Conference Proceeding
Language:English
Subjects:
Bandwidth
Capacitance
Circuit simulation
Equations
FETs
Frequency estimation
Gallium arsenide
Impedance
Optical amplifiers
Semiconductor device measurement
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Over 65% efficiency 300MHz bandwidth C-band internally-matched GaAs FET has been developed by using a large-signal FET model. In order to achieve high efficiency in broad-band, optimum impedances at each frequency are estimated by using the large-signal FET model. The large-signal FET model is based on Angelov model. The capacitance equations of the model are improved to satisfy charge conservation. The model parameters are extracted for a unit cell FET with a small gate width. The unit cell FET model was scaled up to one chip FET model with a wide gate width, considering increase of source inductance by sharing via holes. The developed C-band internally-matched FET has achieved power-added efficiency (PAE) of over 65% across 300MHz bandwidth.
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.2004.1336030