Temperature effect on power characteristics of SiGe HBTs

In this paper, the linear power gain, gain expansion and gain compression of power SiGe HBTs at various temperatures have been presented. At low base voltage, the linear power gain increases with increasing temperature, while the linear power gain decreases at high base voltage. Besides we observe t...

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Bibliographic Details
Main Authors: PENG, An-Sam, CHEN, Kun-Ming, HUANG, Guo-Wei, CHO, Ming-Hsiang, WANG, Sheng-Chun, DENG, Yu-Min, TSENG, Hua-Chou, HSU, Tsun-Lai
Format: Conference Proceeding
Language:English
Subjects:
Applied sciences
Cutoff frequency
Electronics
Exact sciences and technology
Fingers
Gain
Germanium silicon alloys
Heterojunction bipolar transistors
Low voltage
Microwave devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon germanium
Temperature dependence
Thermal conductivity
Transistors
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Summary:In this paper, the linear power gain, gain expansion and gain compression of power SiGe HBTs at various temperatures have been presented. At low base voltage, the linear power gain increases with increasing temperature, while the linear power gain decreases at high base voltage. Besides we observe the gain expansion will exist as base voltage is in low value, but it will disappear when the temperature increases to 75/spl deg/C. After gain compression, the power gain increases with increasing temperature no matter what the base voltage is. We explain this phenomenon by analyzing the cutoff frequency and the collector current at different temperatures.
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.2004.1338993