Low-energy neutron sensitivity of recent generation SRAMs

This experimental study investigated the sensitivity of 0.22 to 0.13 /spl mu/m CMOS-based SRAMs to single-event upsets (SEUs) induced by thermal and fission neutrons (energies below 6 MeV). Results showed that both supply voltage and type of component model can have significant impact.

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Bibliographic Details
Published in:IEEE transactions on nuclear science 2004-10, Vol.51 (5), p.2811-2816
Main Authors: Armani, J.M., Simon, G., Poirot, P.
Format: Article
Language:English
Subjects:
Aerospace electronics
Circuits
CMOS technology
Inductors
Neutrons
Random access memory
Single event transient
Single event upset
Testing
Voltage
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Description
Summary:This experimental study investigated the sensitivity of 0.22 to 0.13 /spl mu/m CMOS-based SRAMs to single-event upsets (SEUs) induced by thermal and fission neutrons (energies below 6 MeV). Results showed that both supply voltage and type of component model can have significant impact.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2004.835080