Calculated voltage characteristics for tunnel junctions in double cavity long-wavelength surface emitting lasers

This work presents a breakdown of the voltage contributions from various parts of the structure. The device layout delimits several key contributors to the total voltage of the device: the voltage due to lateral spreading resistance of the two intracavity contacts, the voltage due to the series resi...

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Bibliographic Details
Main Authors: Mehta, M., Bjorlin, E.S., Bowers, J.E.
Format: Conference Proceeding
Language:English
Subjects:
Breakdown voltage
Communication industry
Computer industry
Contact resistance
Diodes
Distributed Bragg reflectors
Doping
Photonic band gap
Surface emitting lasers
Vertical cavity surface emitting lasers
Online Access:Request full text
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Summary:This work presents a breakdown of the voltage contributions from various parts of the structure. The device layout delimits several key contributors to the total voltage of the device: the voltage due to lateral spreading resistance of the two intracavity contacts, the voltage due to the series resistance of vertical transport through the p-cladding layer, the active region diode, and the tunnel junction (TJ). Since TJs in VCSELs based on the InP material system are still a maturing technology, we focus most of our effort on developing a thorough model for the tunnel junction in hopes of improving our TJ for future VCSEL devices.
DOI:10.1109/NUSOD.2004.1345148