Catastrophic failure of power silicon PN junctions at high temperature induced by the surface leakage reverse current

The operation of commercial power silicon devices, available at this time, is not possible above 175-200/spl deg/C junction temperature, without risk of failure. The surface leakage reverse current component is a source of nonnegligible localized power dissipation at high temperature. An overheating...

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Bibliographic Details
Main Authors: Obreja, V.V.N., Buiu, O., Nuttall, K.I., Codreanu, C., Sung, M.L., Pei, P.
Format: Conference Proceeding
Language:English
Subjects:
Applied sciences
Compound structure devices
Consumer electronics
Electrical engineering. Electrical power engineering
Electronic equipment and fabrication. Passive components, printed wiring boards, connectics
Electronics
Exact sciences and technology
Failure analysis
Heat sinks
Power dissipation
Power electronics, power supplies
Research and development
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon
Surface resistance
Temperature
Thermal resistance
Voltage
Online Access:Request full text
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Summary:The operation of commercial power silicon devices, available at this time, is not possible above 175-200/spl deg/C junction temperature, without risk of failure. The surface leakage reverse current component is a source of nonnegligible localized power dissipation at high temperature. An overheating at the junction peripheral surface is possible and the reverse current thermal runaway may lead to definitive material degradation at the junction edge. Typical I-V reverse characteristics from room temperature to above 200/spl deg/C, from available devices on the market, are shown. The presence of the surface current for standard recovery and fast recovery high voltage junctions is outlined.
DOI:10.1109/IPFA.2004.1345587