Air gap technology by selective ozone/TEOS deposition

A technology for fabrication of air gaps is presented which is based upon selective ozone/TEOS deposition of oxide. Due to the isotropic growth direction of this process, some disadvantages of the more common approaches by nonconformal CVD processes can be avoided. It is demonstrated that air gap te...

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Bibliographic Details
Main Authors: Gabric, Z., Pamler, W., Schindler, G., Steinhogl, W., Traving, M.
Format: Conference Proceeding
Language:English
Subjects:
Air gaps
Applied sciences
Conducting materials
Delay systems
Electronics
Exact sciences and technology
Fabrication
Inorganic materials
Insulation
Lithography
Microelectronic fabrication (materials and surfaces technology)
Parasitic capacitance
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Semiconductor materials
Silicon on insulator technology
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Summary:A technology for fabrication of air gaps is presented which is based upon selective ozone/TEOS deposition of oxide. Due to the isotropic growth direction of this process, some disadvantages of the more common approaches by nonconformal CVD processes can be avoided. It is demonstrated that air gap technology has the potential to reduce the capacitance between adjacent metal lines roughly by a factor of 2 compared to full structures without air gaps.
DOI:10.1109/IITC.2004.1345723