Effect of Ge deposition rate on growth and optical properties of Ge(Si)/Si(001) self-assembled islands

In this paper we study the growth and photoluminescence spectra of GeSi/Si(001) self-assembled islands grown in wide range of Ge deposition rate (/spl nu//sub Ge/=0.1/spl divide/0.75 /spl Aring//s). AFM studies of these structures revealed that for all Ge growth rates the dominant island species is...

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Bibliographic Details
Main Authors: Shaleev, Krasilnik, Lobanov, Novikov, Vostokov, Yablonsky
Format: Conference Proceeding
Language:English
Subjects:
Atomic force microscopy
Epitaxial growth
Germanium
Photoluminescence
Semiconductor epitaxial layers
Semiconductor growth
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Summary:In this paper we study the growth and photoluminescence spectra of GeSi/Si(001) self-assembled islands grown in wide range of Ge deposition rate (/spl nu//sub Ge/=0.1/spl divide/0.75 /spl Aring//s). AFM studies of these structures revealed that for all Ge growth rates the dominant island species is the dome-shaped islands. It was found that the lateral size of dome islands is decreased and their surface density is increased with increasing of /spl nu//sub Ge/. The decreasing of the lateral size is connected to increasing of Ge content in islands and part of surface occupied by the islands. The red-shift of the island related photoluminescence peak was observed during the island Ge growth rate increasing. This shift is associated with increasing of Ge content in islands.
DOI:10.1109/PESC.2004.241011