Molybdenum gate technology for ultrathin-body MOSFETs and FinFETs

Damage-free sputter deposition and highly selective dry-etch processes have been developed for molybdenum (Mo) metal gate technology, for application to fully depleted silicon-on-insulator ( devices such as the ultrathin body (UTB) MOSFET and double-gate FinFET. A plasma charge trap effectively elim...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2004-12, Vol.51 (12), p.1989-1996
Main Authors: Daewon Ha, Takeuchi, H., Yang-Kyu Choi, Tsu-Jae King
Format: Article
Language:English
Subjects:
Applied sciences
Complementary metal-oxide-semiconductor (CMOS)
Design. Technologies. Operation analysis. Testing
dry etching
Electronics
Etching
Exact sciences and technology
FinFET
fully depleted silicon-on-insulator (FD SOI)
Integrated circuits
Microelectronic fabrication (materials and surfaces technology)
Molybdenum materials/devices
molybdenum metal gate
MOSFETs
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon on insulator technology
sputter
Sputtering
Transistors
ultrathin body
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Summary:Damage-free sputter deposition and highly selective dry-etch processes have been developed for molybdenum (Mo) metal gate technology, for application to fully depleted silicon-on-insulator ( devices such as the ultrathin body (UTB) MOSFET and double-gate FinFET. A plasma charge trap effectively eliminates high-energy particle bombardment during Mo sputtering; hence the gate-dielectric integrity (TDDB, Q/sub BD/) is significantly improved and the field-effect mobility in Mo-gated MOSFETs follows the universal mobility curve. The effects of etch process parameters such as chlorine (Cl/sub 2/) and oxygen (O/sub 2/) gas flow rate, and source and bias radio frequence powers, were investigated in order to optimize the Mo etch rate and selectivity to SiO/sub 2/. A highly selective etch process was successfully applied to pattern Mo gate electrodes for UTB MOSFETs and FinFETs without leaving any residue or stringers. Measured electrical characteristics and physical analysis results are discussed.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2004.839752