Temperature and bias characteristics of p-i-n optical modulators for free-space optical communications

Operational characteristics of InGaAs/InAlAs based MQW modulators, with different device designs, for a wide temperature range (-40/spl deg/C to 70/spl deg/C) are reported. The modulator peak extinction ratio wavelength is shown to be a linear function of temperature.

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Bibliographic Details
Main Authors: Onat, B.M., Masaun, N., Martin, T., Dries, J.C.
Format: Conference Proceeding
Language:English
Subjects:
Applied sciences
Circuit properties
Dark current
Doped fiber amplifiers
Electric, optical and optoelectronic circuits
Electronics
Etching
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Gold
Indium gallium arsenide
Integrated optics. Optical fibers and wave guides
Optical and optoelectronic circuits
Optical elements, devices, and systems
Optical modulation
Optical processors, correlators, and modulators
Optical sensors
Optical telecommunications
Optics
Physics
PIN photodiodes
Plasma temperature
Quantum well devices
Telecommunications
Telecommunications and information theory
Wave optics
Wave propagation, transmission and absorption
Wireless optical communications
Online Access:Request full text
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Description
Summary:Operational characteristics of InGaAs/InAlAs based MQW modulators, with different device designs, for a wide temperature range (-40/spl deg/C to 70/spl deg/C) are reported. The modulator peak extinction ratio wavelength is shown to be a linear function of temperature.
DOI:10.1109/LEOS.2004.1363227