A low complexity 0.13 /spl mu/ SiGe BiCMOS technology for wireless and mixed signal applications

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Bibliographic Details
Main Authors: Lanzerotti, L., Feilchenfeld, N., Coolbaugh, D., Slinkman, J., Gray, P., Sheridan, D., Higgins, J., Hodge, W., Gordon, M., Larsen, T., Gautsch, M., Lindgren, P., Murty, R., Rascoe, J., Watson, K., Stamper, T., Eshun, E., He, J., Downes, K., Rassel, R., Greco, J., Labelle, B., Sweeney, S., Stein, K., Bolam, R., Vaed, K., Omer, B., Joseph, A., St Onge, S., Dunn, J.
Format: Conference Proceeding
Language:English
Subjects:
BiCMOS integrated circuits
CMOS technology
Costs
Electric breakdown
FETs
Foundries
Germanium silicon alloys
Implants
Isolation technology
Silicon germanium
Online Access:Request full text
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DOI:10.1109/BIPOL.2004.1365789