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A low complexity 0.13 /spl mu/ SiGe BiCMOS technology for wireless and mixed signal applications
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| creator | Lanzerotti, L. Feilchenfeld, N. Coolbaugh, D. Slinkman, J. Gray, P. Sheridan, D. Higgins, J. Hodge, W. Gordon, M. Larsen, T. Gautsch, M. Lindgren, P. Murty, R. Rascoe, J. Watson, K. Stamper, T. Eshun, E. He, J. Downes, K. Rassel, R. Greco, J. Labelle, B. Sweeney, S. Stein, K. Bolam, R. Vaed, K. Omer, B. Joseph, A. St Onge, S. Dunn, J. |
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| doi_str_mv | 10.1109/BIPOL.2004.1365789 |
| format | conference_proceeding |
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| fulltext | fulltext_linktorsrc |
| identifier | ISBN: 0780386183 |
| ispartof | Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting, 2004, p.237-240 |
| issn | |
| language | eng |
| recordid | cdi_ieee_primary_1365789 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | BiCMOS integrated circuits CMOS technology Costs Electric breakdown FETs Foundries Germanium silicon alloys Implants Isolation technology Silicon germanium |
| title | A low complexity 0.13 /spl mu/ SiGe BiCMOS technology for wireless and mixed signal applications |
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