N incorporation into ALD HfO/sub 2/ gate dielectric using ion implantation [MOSFET application]

A fabrication process for HfON, using ion implantation of N/sub 2/ in ALD HfO/sub 2/, was demonstrated. Results showed that a good quality HfON could be formed by N/sub 2/ implantation, which suggests nitrogen implantation can be an alternative high-k nitridation technique. This process was successf...

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Main Authors: Li, H.-J., Pompl, T., Young, C., Rhoad, T., Saulters, J., Peterson, J., Gardner, M., Brown, G.A., Bersuker, G., Zeitzoff, P.M., Price, J., Hung, P.Y., Diebold, A., Huff, H.R.
Format: Conference Proceeding
Language:English
Subjects:
CMOS process
Electric variables measurement
Fabrication
Fluid flow measurement
Hafnium oxide
High K dielectric materials
High-K gate dielectrics
Ion implantation
Nitrogen
Pulse measurements
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container_end_page 16 vol.1
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container_start_page 15
container_title
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creator Li, H.-J.
Pompl, T.
Young, C.
Rhoad, T.
Saulters, J.
Peterson, J.
Gardner, M.
Brown, G.A.
Bersuker, G.
Zeitzoff, P.M.
Price, J.
Hung, P.Y.
Diebold, A.
Huff, H.R.
description A fabrication process for HfON, using ion implantation of N/sub 2/ in ALD HfO/sub 2/, was demonstrated. Results showed that a good quality HfON could be formed by N/sub 2/ implantation, which suggests nitrogen implantation can be an alternative high-k nitridation technique. This process was successfully integrated into a traditional CMOS flow and the electrical and reliability results of HfON, as compared to HfO/sub 2/, showed 10 times less Vt shift in the pulsed Id-Vg measurement and up to 70% gate leakage reduction. In addition, EOT, electron/hole mobility, TDDB and subthreshold slope of HfON also performed better than those of HfO/sub 2/. A model is proposed to explain the result by attributing the improvement to the reduction of defect states (oxygen vacancies) in the HfO/sub 2/ film by the presence of N in the HfON film.
doi_str_mv 10.1109/DRC.2004.1367760
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fullrecord <record><control><sourceid>ieee_CHZPO</sourceid><recordid>TN_cdi_ieee_primary_1367760</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>1367760</ieee_id><sourcerecordid>1367760</sourcerecordid><originalsourceid>FETCH-ieee_primary_13677603</originalsourceid><addsrcrecordid>eNp9jz1vwjAYhF_1Q2qg3St1ef9AktdxYrtjBUUMfEjQraoiNzXIVUgs2wz8exDN3Ol0d88NB_DMKGOMXvPpZpIVRGXGuJBS0A0khSgpFaritzAiqYirQpXiDhJWlSrlUtIDjEL4Jao4U1UC9Qpt1_Te9V5H23cXF3t8W0xxvlvn4fiNRY57HQ3-WNOaJnrb4DHYbo9X-uBa3cW_6edyvZ29f6B2rrXNNft6hPudboN5GnQMLxdkMk-tMaZ23h60P9XDAf5_ewYYe0W8</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>N incorporation into ALD HfO/sub 2/ gate dielectric using ion implantation [MOSFET application]</title><source>IEEE Xplore All Conference Series</source><creator>Li, H.-J. ; Pompl, T. ; Young, C. ; Rhoad, T. ; Saulters, J. ; Peterson, J. ; Gardner, M. ; Brown, G.A. ; Bersuker, G. ; Zeitzoff, P.M. ; Price, J. ; Hung, P.Y. ; Diebold, A. ; Huff, H.R.</creator><creatorcontrib>Li, H.-J. ; Pompl, T. ; Young, C. ; Rhoad, T. ; Saulters, J. ; Peterson, J. ; Gardner, M. ; Brown, G.A. ; Bersuker, G. ; Zeitzoff, P.M. ; Price, J. ; Hung, P.Y. ; Diebold, A. ; Huff, H.R.</creatorcontrib><description>A fabrication process for HfON, using ion implantation of N/sub 2/ in ALD HfO/sub 2/, was demonstrated. Results showed that a good quality HfON could be formed by N/sub 2/ implantation, which suggests nitrogen implantation can be an alternative high-k nitridation technique. This process was successfully integrated into a traditional CMOS flow and the electrical and reliability results of HfON, as compared to HfO/sub 2/, showed 10 times less Vt shift in the pulsed Id-Vg measurement and up to 70% gate leakage reduction. In addition, EOT, electron/hole mobility, TDDB and subthreshold slope of HfON also performed better than those of HfO/sub 2/. A model is proposed to explain the result by attributing the improvement to the reduction of defect states (oxygen vacancies) in the HfO/sub 2/ film by the presence of N in the HfON film.</description><identifier>ISSN: 1548-3770</identifier><identifier>ISBN: 0780382846</identifier><identifier>ISBN: 9780780382848</identifier><identifier>EISSN: 2640-6853</identifier><identifier>DOI: 10.1109/DRC.2004.1367760</identifier><language>eng</language><publisher>IEEE</publisher><subject>CMOS process ; Electric variables measurement ; Fabrication ; Fluid flow measurement ; Hafnium oxide ; High K dielectric materials ; High-K gate dielectrics ; Ion implantation ; Nitrogen ; Pulse measurements</subject><ispartof>Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC, 2004, p.15-16 vol.1</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1367760$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2058,4050,4051,27925,54555,54920,54932</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1367760$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Li, H.-J.</creatorcontrib><creatorcontrib>Pompl, T.</creatorcontrib><creatorcontrib>Young, C.</creatorcontrib><creatorcontrib>Rhoad, T.</creatorcontrib><creatorcontrib>Saulters, J.</creatorcontrib><creatorcontrib>Peterson, J.</creatorcontrib><creatorcontrib>Gardner, M.</creatorcontrib><creatorcontrib>Brown, G.A.</creatorcontrib><creatorcontrib>Bersuker, G.</creatorcontrib><creatorcontrib>Zeitzoff, P.M.</creatorcontrib><creatorcontrib>Price, J.</creatorcontrib><creatorcontrib>Hung, P.Y.</creatorcontrib><creatorcontrib>Diebold, A.</creatorcontrib><creatorcontrib>Huff, H.R.</creatorcontrib><title>N incorporation into ALD HfO/sub 2/ gate dielectric using ion implantation [MOSFET application]</title><title>Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC</title><addtitle>DRC</addtitle><description>A fabrication process for HfON, using ion implantation of N/sub 2/ in ALD HfO/sub 2/, was demonstrated. Results showed that a good quality HfON could be formed by N/sub 2/ implantation, which suggests nitrogen implantation can be an alternative high-k nitridation technique. This process was successfully integrated into a traditional CMOS flow and the electrical and reliability results of HfON, as compared to HfO/sub 2/, showed 10 times less Vt shift in the pulsed Id-Vg measurement and up to 70% gate leakage reduction. In addition, EOT, electron/hole mobility, TDDB and subthreshold slope of HfON also performed better than those of HfO/sub 2/. A model is proposed to explain the result by attributing the improvement to the reduction of defect states (oxygen vacancies) in the HfO/sub 2/ film by the presence of N in the HfON film.</description><subject>CMOS process</subject><subject>Electric variables measurement</subject><subject>Fabrication</subject><subject>Fluid flow measurement</subject><subject>Hafnium oxide</subject><subject>High K dielectric materials</subject><subject>High-K gate dielectrics</subject><subject>Ion implantation</subject><subject>Nitrogen</subject><subject>Pulse measurements</subject><issn>1548-3770</issn><issn>2640-6853</issn><isbn>0780382846</isbn><isbn>9780780382848</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2004</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><recordid>eNp9jz1vwjAYhF_1Q2qg3St1ef9AktdxYrtjBUUMfEjQraoiNzXIVUgs2wz8exDN3Ol0d88NB_DMKGOMXvPpZpIVRGXGuJBS0A0khSgpFaritzAiqYirQpXiDhJWlSrlUtIDjEL4Jao4U1UC9Qpt1_Te9V5H23cXF3t8W0xxvlvn4fiNRY57HQ3-WNOaJnrb4DHYbo9X-uBa3cW_6edyvZ29f6B2rrXNNft6hPudboN5GnQMLxdkMk-tMaZ23h60P9XDAf5_ewYYe0W8</recordid><startdate>2004</startdate><enddate>2004</enddate><creator>Li, H.-J.</creator><creator>Pompl, T.</creator><creator>Young, C.</creator><creator>Rhoad, T.</creator><creator>Saulters, J.</creator><creator>Peterson, J.</creator><creator>Gardner, M.</creator><creator>Brown, G.A.</creator><creator>Bersuker, G.</creator><creator>Zeitzoff, P.M.</creator><creator>Price, J.</creator><creator>Hung, P.Y.</creator><creator>Diebold, A.</creator><creator>Huff, H.R.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>2004</creationdate><title>N incorporation into ALD HfO/sub 2/ gate dielectric using ion implantation [MOSFET application]</title><author>Li, H.-J. ; Pompl, T. ; Young, C. ; Rhoad, T. ; Saulters, J. ; Peterson, J. ; Gardner, M. ; Brown, G.A. ; Bersuker, G. ; Zeitzoff, P.M. ; Price, J. ; Hung, P.Y. ; Diebold, A. ; Huff, H.R.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-ieee_primary_13677603</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2004</creationdate><topic>CMOS process</topic><topic>Electric variables measurement</topic><topic>Fabrication</topic><topic>Fluid flow measurement</topic><topic>Hafnium oxide</topic><topic>High K dielectric materials</topic><topic>High-K gate dielectrics</topic><topic>Ion implantation</topic><topic>Nitrogen</topic><topic>Pulse measurements</topic><toplevel>online_resources</toplevel><creatorcontrib>Li, H.-J.</creatorcontrib><creatorcontrib>Pompl, T.</creatorcontrib><creatorcontrib>Young, C.</creatorcontrib><creatorcontrib>Rhoad, T.</creatorcontrib><creatorcontrib>Saulters, J.</creatorcontrib><creatorcontrib>Peterson, J.</creatorcontrib><creatorcontrib>Gardner, M.</creatorcontrib><creatorcontrib>Brown, G.A.</creatorcontrib><creatorcontrib>Bersuker, G.</creatorcontrib><creatorcontrib>Zeitzoff, P.M.</creatorcontrib><creatorcontrib>Price, J.</creatorcontrib><creatorcontrib>Hung, P.Y.</creatorcontrib><creatorcontrib>Diebold, A.</creatorcontrib><creatorcontrib>Huff, H.R.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Xplore Digital Library</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Li, H.-J.</au><au>Pompl, T.</au><au>Young, C.</au><au>Rhoad, T.</au><au>Saulters, J.</au><au>Peterson, J.</au><au>Gardner, M.</au><au>Brown, G.A.</au><au>Bersuker, G.</au><au>Zeitzoff, P.M.</au><au>Price, J.</au><au>Hung, P.Y.</au><au>Diebold, A.</au><au>Huff, H.R.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>N incorporation into ALD HfO/sub 2/ gate dielectric using ion implantation [MOSFET application]</atitle><btitle>Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC</btitle><stitle>DRC</stitle><date>2004</date><risdate>2004</risdate><spage>15</spage><epage>16 vol.1</epage><pages>15-16 vol.1</pages><issn>1548-3770</issn><eissn>2640-6853</eissn><isbn>0780382846</isbn><isbn>9780780382848</isbn><abstract>A fabrication process for HfON, using ion implantation of N/sub 2/ in ALD HfO/sub 2/, was demonstrated. Results showed that a good quality HfON could be formed by N/sub 2/ implantation, which suggests nitrogen implantation can be an alternative high-k nitridation technique. This process was successfully integrated into a traditional CMOS flow and the electrical and reliability results of HfON, as compared to HfO/sub 2/, showed 10 times less Vt shift in the pulsed Id-Vg measurement and up to 70% gate leakage reduction. In addition, EOT, electron/hole mobility, TDDB and subthreshold slope of HfON also performed better than those of HfO/sub 2/. A model is proposed to explain the result by attributing the improvement to the reduction of defect states (oxygen vacancies) in the HfO/sub 2/ film by the presence of N in the HfON film.</abstract><pub>IEEE</pub><doi>10.1109/DRC.2004.1367760</doi></addata></record>
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identifier ISSN: 1548-3770
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issn 1548-3770
2640-6853
language eng
recordid cdi_ieee_primary_1367760
source IEEE Xplore All Conference Series
subjects CMOS process
Electric variables measurement
Fabrication
Fluid flow measurement
Hafnium oxide
High K dielectric materials
High-K gate dielectrics
Ion implantation
Nitrogen
Pulse measurements
title N incorporation into ALD HfO/sub 2/ gate dielectric using ion implantation [MOSFET application]
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-01T14%3A24%3A29IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_CHZPO&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=N%20incorporation%20into%20ALD%20HfO/sub%202/%20gate%20dielectric%20using%20ion%20implantation%20%5BMOSFET%20application%5D&rft.btitle=Conference%20Digest%20%5BIncludes%20'Late%20News%20Papers'%20volume%5D%20Device%20Research%20Conference,%202004.%2062nd%20DRC&rft.au=Li,%20H.-J.&rft.date=2004&rft.spage=15&rft.epage=16%20vol.1&rft.pages=15-16%20vol.1&rft.issn=1548-3770&rft.eissn=2640-6853&rft.isbn=0780382846&rft.isbn_list=9780780382848&rft_id=info:doi/10.1109/DRC.2004.1367760&rft_dat=%3Cieee_CHZPO%3E1367760%3C/ieee_CHZPO%3E%3Cgrp_id%3Ecdi_FETCH-ieee_primary_13677603%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=1367760&rfr_iscdi=true