Current enhancement in regioregular poly(thiophene) thin film transistors

Thin-film transistors (TFTs) made with solution-processed polymeric semiconductors are being developed for use in large-area, low-cost electronic devices such as displays. The carrier mobility in most polymers is about ten times smaller than that in amorphous silicon. To be useful for circuits, the...

Full description

Saved in:
Bibliographic Details
Main Authors: Chabinyc, M.L., Jeng-Ping Lu, Salleo, A., Street, R.A.
Format: Conference Proceeding
Language:English
Subjects:
Applied sciences
Circuits
Current measurement
Dielectrics
Displays
Electronics
Exact sciences and technology
Glass
Length measurement
Polymers
Semiconductor device modeling
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Thin film transistors
Transistors
Voltage
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Thin-film transistors (TFTs) made with solution-processed polymeric semiconductors are being developed for use in large-area, low-cost electronic devices such as displays. The carrier mobility in most polymers is about ten times smaller than that in amorphous silicon. To be useful for circuits, the dimensions of TFTs made with polymers must be scaled to compensate for this deficiency because high-quality, ultra-thin or high-k dielectrics are not available for these applications. Deviations from ideal FET behavior are widely reported for polymer TFTs with channel lengths shorter than /spl sim/10 /spl mu/m and these deviations are currently not understood. In this paper, we present an explanation of this phenomenon for the first time. 2D simulations will be necessary to further model the current-voltage characteristics. These data are important for the development of device models for polymeric circuits and for the determination of materials properties from I-V characteristics of TFTs.
ISSN:1548-3770
2640-6853
DOI:10.1109/DRC.2004.1367901