Measurement of trapping time constants in proton-irradiated silicon pad detectors

Silicon pad-detectors fabricated from oxygenated silicon were irradiated with 24-GeV/c protons with fluences between 2/spl middot/10/sup 13/ n/sub eq//cm/sup 2/ and 9/spl middot/10/sup 14/ n/sub eq//cm/sup 2/. The transient current technique was used to measure the trapping probability for holes and...

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Bibliographic Details
Published in:IEEE transactions on nuclear science 2004-12, Vol.51 (6), p.3055-3062
Main Authors: Krasel, O., Gossling, C., Klingenberg, R., Rajek, S., Wunstorf, R.
Format: Article
Language:English
Subjects:
Annealing
Atherosclerosis
Charge carrier processes
Current measurement
Detectors
Electron traps
Large Hadron Collider
Silicon
Time measurement
Voltage
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Summary:Silicon pad-detectors fabricated from oxygenated silicon were irradiated with 24-GeV/c protons with fluences between 2/spl middot/10/sup 13/ n/sub eq//cm/sup 2/ and 9/spl middot/10/sup 14/ n/sub eq//cm/sup 2/. The transient current technique was used to measure the trapping probability for holes and electrons. The measured trapping probabilities scale linearly with the fluence. Annealing, accelerated at 60/spl deg/C, leads to an increased trapping for holes while electron trapping decreases.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2004.839096