Measurement of trapping time constants in proton-irradiated silicon pad detectors

Silicon pad-detectors fabricated from oxygenated silicon were irradiated with 24-GeV/c protons with fluences between 2/spl middot/10/sup 13/ n/sub eq//cm/sup 2/ and 9/spl middot/10/sup 14/ n/sub eq//cm/sup 2/. The transient current technique was used to measure the trapping probability for holes and...

Full description

Saved in:
Bibliographic Details
Published in:IEEE transactions on nuclear science 2004-12, Vol.51 (6), p.3055-3062
Main Authors: Krasel, O., Gossling, C., Klingenberg, R., Rajek, S., Wunstorf, R.
Format: Article
Language:English
Subjects:
Annealing
Atherosclerosis
Charge carrier processes
Current measurement
Detectors
Electron traps
Large Hadron Collider
Silicon
Time measurement
Voltage
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by cdi_FETCH-LOGICAL-c421t-1ca99cdc68069901d03fa9acaccab1a2bebbf19fa909a0208b18fa916da4bfcb3
cites cdi_FETCH-LOGICAL-c421t-1ca99cdc68069901d03fa9acaccab1a2bebbf19fa909a0208b18fa916da4bfcb3
container_end_page 3062
container_issue 6
container_start_page 3055
container_title IEEE transactions on nuclear science
container_volume 51
creator Krasel, O.
Gossling, C.
Klingenberg, R.
Rajek, S.
Wunstorf, R.
description Silicon pad-detectors fabricated from oxygenated silicon were irradiated with 24-GeV/c protons with fluences between 2/spl middot/10/sup 13/ n/sub eq//cm/sup 2/ and 9/spl middot/10/sup 14/ n/sub eq//cm/sup 2/. The transient current technique was used to measure the trapping probability for holes and electrons. The measured trapping probabilities scale linearly with the fluence. Annealing, accelerated at 60/spl deg/C, leads to an increased trapping for holes while electron trapping decreases.
doi_str_mv 10.1109/TNS.2004.839096
format article
fullrecord <record><control><sourceid>proquest_ieee_</sourceid><recordid>TN_cdi_ieee_primary_1369434</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>1369434</ieee_id><sourcerecordid>28379671</sourcerecordid><originalsourceid>FETCH-LOGICAL-c421t-1ca99cdc68069901d03fa9acaccab1a2bebbf19fa909a0208b18fa916da4bfcb3</originalsourceid><addsrcrecordid>eNpdkM1LxDAUxIMouK6ePXgJHrx1N2nTbt5RFr9gVcT1HF7TVLK0aU2yB_97s1QQPD3m8ZthGEIuOVtwzmC5fXlf5IyJhSyAQXVEZrwsZcbLlTwmM8a4zEAAnJKzEHZJipKVM_L2bDDsvemNi3RoafQ4jtZ90mh7Q_XgQkQXA7WOjn6Ig8us99hYjKahwXY2IXTEhjYmGh0HH87JSYtdMBe_d04-7u-268ds8_rwtL7dZFrkPGZcI4BudCVZBcB4w4oWATVqjTXHvDZ13XJIPwbIciZrLpPgVYOibnVdzMnNlJt6fe1NiKq3QZuuQ2eGfVC5LFZQrXgCr_-Bu2HvXeqmIOXKKhcyQcsJ0n4IwZtWjd726L8VZ-qwr0r7qsO-ato3Oa4mhzXG_NFFBaIQxQ9zinif</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>920886248</pqid></control><display><type>article</type><title>Measurement of trapping time constants in proton-irradiated silicon pad detectors</title><source>IEEE Electronic Library (IEL) Journals</source><creator>Krasel, O. ; Gossling, C. ; Klingenberg, R. ; Rajek, S. ; Wunstorf, R.</creator><creatorcontrib>Krasel, O. ; Gossling, C. ; Klingenberg, R. ; Rajek, S. ; Wunstorf, R.</creatorcontrib><description>Silicon pad-detectors fabricated from oxygenated silicon were irradiated with 24-GeV/c protons with fluences between 2/spl middot/10/sup 13/ n/sub eq//cm/sup 2/ and 9/spl middot/10/sup 14/ n/sub eq//cm/sup 2/. The transient current technique was used to measure the trapping probability for holes and electrons. The measured trapping probabilities scale linearly with the fluence. Annealing, accelerated at 60/spl deg/C, leads to an increased trapping for holes while electron trapping decreases.</description><identifier>ISSN: 0018-9499</identifier><identifier>EISSN: 1558-1578</identifier><identifier>DOI: 10.1109/TNS.2004.839096</identifier><identifier>CODEN: IETNAE</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Annealing ; Atherosclerosis ; Charge carrier processes ; Current measurement ; Detectors ; Electron traps ; Large Hadron Collider ; Silicon ; Time measurement ; Voltage</subject><ispartof>IEEE transactions on nuclear science, 2004-12, Vol.51 (6), p.3055-3062</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2004</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c421t-1ca99cdc68069901d03fa9acaccab1a2bebbf19fa909a0208b18fa916da4bfcb3</citedby><cites>FETCH-LOGICAL-c421t-1ca99cdc68069901d03fa9acaccab1a2bebbf19fa909a0208b18fa916da4bfcb3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1369434$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,27924,27925,54796</link.rule.ids></links><search><creatorcontrib>Krasel, O.</creatorcontrib><creatorcontrib>Gossling, C.</creatorcontrib><creatorcontrib>Klingenberg, R.</creatorcontrib><creatorcontrib>Rajek, S.</creatorcontrib><creatorcontrib>Wunstorf, R.</creatorcontrib><title>Measurement of trapping time constants in proton-irradiated silicon pad detectors</title><title>IEEE transactions on nuclear science</title><addtitle>TNS</addtitle><description>Silicon pad-detectors fabricated from oxygenated silicon were irradiated with 24-GeV/c protons with fluences between 2/spl middot/10/sup 13/ n/sub eq//cm/sup 2/ and 9/spl middot/10/sup 14/ n/sub eq//cm/sup 2/. The transient current technique was used to measure the trapping probability for holes and electrons. The measured trapping probabilities scale linearly with the fluence. Annealing, accelerated at 60/spl deg/C, leads to an increased trapping for holes while electron trapping decreases.</description><subject>Annealing</subject><subject>Atherosclerosis</subject><subject>Charge carrier processes</subject><subject>Current measurement</subject><subject>Detectors</subject><subject>Electron traps</subject><subject>Large Hadron Collider</subject><subject>Silicon</subject><subject>Time measurement</subject><subject>Voltage</subject><issn>0018-9499</issn><issn>1558-1578</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2004</creationdate><recordtype>article</recordtype><recordid>eNpdkM1LxDAUxIMouK6ePXgJHrx1N2nTbt5RFr9gVcT1HF7TVLK0aU2yB_97s1QQPD3m8ZthGEIuOVtwzmC5fXlf5IyJhSyAQXVEZrwsZcbLlTwmM8a4zEAAnJKzEHZJipKVM_L2bDDsvemNi3RoafQ4jtZ90mh7Q_XgQkQXA7WOjn6Ig8us99hYjKahwXY2IXTEhjYmGh0HH87JSYtdMBe_d04-7u-268ds8_rwtL7dZFrkPGZcI4BudCVZBcB4w4oWATVqjTXHvDZ13XJIPwbIciZrLpPgVYOibnVdzMnNlJt6fe1NiKq3QZuuQ2eGfVC5LFZQrXgCr_-Bu2HvXeqmIOXKKhcyQcsJ0n4IwZtWjd726L8VZ-qwr0r7qsO-ato3Oa4mhzXG_NFFBaIQxQ9zinif</recordid><startdate>20041201</startdate><enddate>20041201</enddate><creator>Krasel, O.</creator><creator>Gossling, C.</creator><creator>Klingenberg, R.</creator><creator>Rajek, S.</creator><creator>Wunstorf, R.</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7QF</scope><scope>7QL</scope><scope>7QQ</scope><scope>7SC</scope><scope>7SE</scope><scope>7SP</scope><scope>7SR</scope><scope>7T7</scope><scope>7TA</scope><scope>7TB</scope><scope>7U5</scope><scope>7U9</scope><scope>8BQ</scope><scope>8FD</scope><scope>C1K</scope><scope>F28</scope><scope>FR3</scope><scope>H8D</scope><scope>H94</scope><scope>JG9</scope><scope>JQ2</scope><scope>KR7</scope><scope>L7M</scope><scope>L~C</scope><scope>L~D</scope><scope>M7N</scope><scope>P64</scope></search><sort><creationdate>20041201</creationdate><title>Measurement of trapping time constants in proton-irradiated silicon pad detectors</title><author>Krasel, O. ; Gossling, C. ; Klingenberg, R. ; Rajek, S. ; Wunstorf, R.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c421t-1ca99cdc68069901d03fa9acaccab1a2bebbf19fa909a0208b18fa916da4bfcb3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2004</creationdate><topic>Annealing</topic><topic>Atherosclerosis</topic><topic>Charge carrier processes</topic><topic>Current measurement</topic><topic>Detectors</topic><topic>Electron traps</topic><topic>Large Hadron Collider</topic><topic>Silicon</topic><topic>Time measurement</topic><topic>Voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Krasel, O.</creatorcontrib><creatorcontrib>Gossling, C.</creatorcontrib><creatorcontrib>Klingenberg, R.</creatorcontrib><creatorcontrib>Rajek, S.</creatorcontrib><creatorcontrib>Wunstorf, R.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE</collection><collection>CrossRef</collection><collection>Aluminium Industry Abstracts</collection><collection>Bacteriology Abstracts (Microbiology B)</collection><collection>Ceramic Abstracts</collection><collection>Computer and Information Systems Abstracts</collection><collection>Corrosion Abstracts</collection><collection>Electronics &amp; Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Industrial and Applied Microbiology Abstracts (Microbiology A)</collection><collection>Materials Business File</collection><collection>Mechanical &amp; Transportation Engineering Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Virology and AIDS Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Environmental Sciences and Pollution Management</collection><collection>ANTE: Abstracts in New Technology &amp; Engineering</collection><collection>Engineering Research Database</collection><collection>Aerospace Database</collection><collection>AIDS and Cancer Research Abstracts</collection><collection>Materials Research Database</collection><collection>ProQuest Computer Science Collection</collection><collection>Civil Engineering Abstracts</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Computer and Information Systems Abstracts – Academic</collection><collection>Computer and Information Systems Abstracts Professional</collection><collection>Algology Mycology and Protozoology Abstracts (Microbiology C)</collection><collection>Biotechnology and BioEngineering Abstracts</collection><jtitle>IEEE transactions on nuclear science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Krasel, O.</au><au>Gossling, C.</au><au>Klingenberg, R.</au><au>Rajek, S.</au><au>Wunstorf, R.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Measurement of trapping time constants in proton-irradiated silicon pad detectors</atitle><jtitle>IEEE transactions on nuclear science</jtitle><stitle>TNS</stitle><date>2004-12-01</date><risdate>2004</risdate><volume>51</volume><issue>6</issue><spage>3055</spage><epage>3062</epage><pages>3055-3062</pages><issn>0018-9499</issn><eissn>1558-1578</eissn><coden>IETNAE</coden><abstract>Silicon pad-detectors fabricated from oxygenated silicon were irradiated with 24-GeV/c protons with fluences between 2/spl middot/10/sup 13/ n/sub eq//cm/sup 2/ and 9/spl middot/10/sup 14/ n/sub eq//cm/sup 2/. The transient current technique was used to measure the trapping probability for holes and electrons. The measured trapping probabilities scale linearly with the fluence. Annealing, accelerated at 60/spl deg/C, leads to an increased trapping for holes while electron trapping decreases.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TNS.2004.839096</doi><tpages>8</tpages></addata></record>
fulltext fulltext
identifier ISSN: 0018-9499
ispartof IEEE transactions on nuclear science, 2004-12, Vol.51 (6), p.3055-3062
issn 0018-9499
1558-1578
language eng
recordid cdi_ieee_primary_1369434
source IEEE Electronic Library (IEL) Journals
subjects Annealing
Atherosclerosis
Charge carrier processes
Current measurement
Detectors
Electron traps
Large Hadron Collider
Silicon
Time measurement
Voltage
title Measurement of trapping time constants in proton-irradiated silicon pad detectors
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-08T04%3A24%3A18IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_ieee_&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Measurement%20of%20trapping%20time%20constants%20in%20proton-irradiated%20silicon%20pad%20detectors&rft.jtitle=IEEE%20transactions%20on%20nuclear%20science&rft.au=Krasel,%20O.&rft.date=2004-12-01&rft.volume=51&rft.issue=6&rft.spage=3055&rft.epage=3062&rft.pages=3055-3062&rft.issn=0018-9499&rft.eissn=1558-1578&rft.coden=IETNAE&rft_id=info:doi/10.1109/TNS.2004.839096&rft_dat=%3Cproquest_ieee_%3E28379671%3C/proquest_ieee_%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c421t-1ca99cdc68069901d03fa9acaccab1a2bebbf19fa909a0208b18fa916da4bfcb3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=920886248&rft_id=info:pmid/&rft_ieee_id=1369434&rfr_iscdi=true