Highly thermal robust Ni-germanosilicide utilizing NiPt/Co/TiN tri-layer for CMOS application

Highly thermal robust Ni-germanosilicide has been developed using the novel NiPt/Co/TiN tri-layer. Ni-germanosilicide properties were characterized with different source/drain dopants and Ge concentrations for nanoscale CMOSFETs application. The sheet resistance was degraded as the Ge concentration...

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Main Authors: YUN, Jang-Gn, OH, Soon-Young, LEE, Jeong-Gun, LEE, Hi-Deok, JI, Hee-Hwan, HUANG, Bin-Feng, PARK, Seong-Hyung, LEE, Heui-Seung, KIM, Dae-Byung, KIM, Ui-Sik, CHA, Han-Seob, HU, Sang-Bum
Format: Conference Proceeding
Language:English
Subjects:
Annealing
Applied sciences
CMOS technology
Design. Technologies. Operation analysis. Testing
Electronics
Exact sciences and technology
Germanium silicon alloys
Integrated circuits
Robustness
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicidation
Silicon germanium
Temperature
Thermal stability
Tin
Ultra large scale integration
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Summary:Highly thermal robust Ni-germanosilicide has been developed using the novel NiPt/Co/TiN tri-layer. Ni-germanosilicide properties were characterized with different source/drain dopants and Ge concentrations for nanoscale CMOSFETs application. The sheet resistance was degraded as the Ge concentration increases in Si/sub 1-x/Ge/sub x/. Low temperature silicidation and wide range of RTP process window are achieved as well as the improvement of the thermal stability according to different dopant types by the subsequent Co and TiN capping layer above NiPt on Si/sub 1-x/Ge/sub x/.
DOI:10.1109/NANO.2004.1392238