Nanoscale materials modification via low-energy reactive plasmas

Materials modification of thin films and nanoparticles through the use of reactive plasmas is discussed. Pulsed radio-frequency nitrogen plasmas have been well characterized through measurement of the ion energy distribution in the plasma. The low-energy nitrogen plasmas are successfully used for ni...

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Bibliographic Details
Main Authors: Kraus, P.A., Thai Cheng Chua, Olsen, C.S., Bauer, T.M.
Format: Conference Proceeding
Language:English
Subjects:
Applied sciences
Dielectric materials
Dielectric thin films
Electronics
Exact sciences and technology
Nanoparticles
Nanostructured materials
Nitrogen
Plasma applications
Plasma materials processing
Plasma measurements
Pulse measurements
Radio frequency
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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Summary:Materials modification of thin films and nanoparticles through the use of reactive plasmas is discussed. Pulsed radio-frequency nitrogen plasmas have been well characterized through measurement of the ion energy distribution in the plasma. The low-energy nitrogen plasmas are successfully used for nitrogen incorporation into ultrathin MOSFET gate dielectrics, where nitrogen dose control and nitrogen profile control are both critical. The use of low-energy, pulsed radio-frequency reactive plasmas for other applications where composition and morphology need to be controlled at the nanometer scale is considered.
DOI:10.1109/NANO.2004.1392239