RF-MEMS SPDT switch on silicon substrate for space applications

The paper illustrates the activity carried out under an ESA contract for the development of a miniaturized RF-MEMS SPDT switch and switch matrix using micromachining technology on a silicon substrate for power applications. A manufacturing procedure, based on an eight masks process, has been set up....

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Bibliographic Details
Main Authors: Farinelli, P., Giacomozzi, F., Mannocchi, G., Marcelli, R., Margesin, B., Mezzanotte, P., Di Nardo, S., Russer, P., Sorrentino, R., Vitulli, F., Vietzorreck, L.
Format: Conference Proceeding
Language:English
Subjects:
Contracts
Frequency
Isolation technology
Manufacturing processes
Micromachining
Paper technology
Radiofrequency microelectromechanical systems
Silicon
Space technology
Switches
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Summary:The paper illustrates the activity carried out under an ESA contract for the development of a miniaturized RF-MEMS SPDT switch and switch matrix using micromachining technology on a silicon substrate for power applications. A manufacturing procedure, based on an eight masks process, has been set up. At present, a broadband single-pole-double-throw (SPDT) switch operating in the 0-30 GHz frequency range has been fabricated and measured. Isolation of about -40 dB and insertion loss better than -0.7 dB have been obtained.
DOI:10.1109/SMIC.2004.1398190