Quantum modeling and proposed designs of CNT-embedded nanoscale MOSFETs

We propose a novel MOSFET design that embodies single-wall zigzag semiconducting carbon nanotubes (CNTs) in the channel. Investigations show that CNTs have high low-field mobilities, which can be as great as 1 /spl times/ 10/sup 5/ cm/sup 2//V/spl middot/s. Thus, we expect that MOSFET performance ca...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2005-04, Vol.52 (4), p.577-584
Main Authors: Akturk, A., Pennington, G., Goldsman, N.
Format: Article
Language:English
Subjects:
Applied sciences
Carbon nanotubes (CNT) mobility model
Channels
Charge carrier mobility
CNT-embedded MOSFET design
Computer simulation
Devices
Electronics
Exact sciences and technology
Mathematical models
Molecular electronics, nanoelectronics
Monte Carlo methods
MOSFETs
Nanostructure
Performance enhancement
Semiconductor device modeling
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon
simulation
single-wall zigzag CNT
Transistors
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Summary:We propose a novel MOSFET design that embodies single-wall zigzag semiconducting carbon nanotubes (CNTs) in the channel. Investigations show that CNTs have high low-field mobilities, which can be as great as 1 /spl times/ 10/sup 5/ cm/sup 2//V/spl middot/s. Thus, we expect that MOSFET performance can be improved by embedding CNTs in the channel. To investigate the performance of a newly proposed CNT-MOSFET device, we develop a methodology that connects CNT modeling to MOSFET simulations. Our calculations indicate that by forming high mobility regions in the channel, MOSFET performance can be boosted. However, barriers formed between the CNT and silicon due to the variations of the bandgaps and electron affinities can degrade MOSFET performance improvements. Our calculations were obtained by building on our existing CNT Monte Carlo simulator , and quantum-based device solver ,.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2005.845148