Improvement in ACLR asymmetry for W-CDMA InGaP/GaAs HBT power amplifier

Asymmetry in Adjacent Channel Leakage power Ratio (ACLR) has been often observed in high power amplifiers for digital wireless communication systems such as W-CDMA. This paper describes a method for reducing the asymmetry by controlling bias circuit impedance at sub harmonics. By shortening both at...

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Bibliographic Details
Main Authors: Kimura, K., Seki, M., Matsumura, N., Honjo, K.
Format: Conference Proceeding
Language:English
Subjects:
Circuits
Frequency
Gallium arsenide
Heterojunction bipolar transistors
High power amplifiers
Multiaccess communication
Power amplifiers
Power measurement
Resins
Transfer functions
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Summary:Asymmetry in Adjacent Channel Leakage power Ratio (ACLR) has been often observed in high power amplifiers for digital wireless communication systems such as W-CDMA. This paper describes a method for reducing the asymmetry by controlling bias circuit impedance at sub harmonics. By shortening both at 4MHz and 8MHz at the bias circuits, an 8.37-dB ACLR asymmetry could be su pressed to a 5.05-dB ACLR asymmetry, where a 10.5-dl3 3 order Inter Modulation Distortion (IMD3) asymmetry could also be successfully improved to a 1.8-dB IMD3 asymmetry.