Sub 30 nm multi-bridge-channel MOSFET (MBCFET) with metal gate electrode for ultra high performance application

We have successfully fabricated sub 30nm N+ poly and TiN gate MBCFET (multi-bridge-channel field effect transistor) both on SOI wafers and bulk-Si wafers. Using TiN metal gate and 20nm multi bridge channels, we achieved the drive current of 2.3mA//spl mu/m that is the largest drive current ever repo...

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Main Authors: YOON, Eun-Jung, LEE, Sung-Young, CHOI, Donguk, KIM, Dong-Won, PARK, Donggun, KIM, Kinam, RYU, Byung-Il, KIM, Sung-Min, KIM, Min-Sang, SUNG HWAN KIM, LI MING, SUK, Sungdae, YEO, Kyounghawn, CHANG WOO OH, CHOE, Jung-Dong
Format: Conference Proceeding
Language:English
Subjects:
Applied sciences
Bridge circuits
Degradation
Drives
Electrodes
Electronics
Exact sciences and technology
FETs
Fluctuations
Ion implantation
MOSFET circuits
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Threshold voltage
Tin
Transistors
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Summary:We have successfully fabricated sub 30nm N+ poly and TiN gate MBCFET (multi-bridge-channel field effect transistor) both on SOI wafers and bulk-Si wafers. Using TiN metal gate and 20nm multi bridge channels, we achieved the drive current of 2.3mA//spl mu/m that is the largest drive current ever reported for pMOSFETs with excellent subthreshold swing of 75mV/dec, and drain induce barrier lowering (DIBL) of 36mV/V. Large I/sub on//I/sub off/ ratio and excellent threshold voltage (V/sub t/) distribution were obtained using TiN metal gate to eliminate channel ion implantation minimizing the mobility degradation and dopant fluctuation.
DOI:10.1109/IEDM.2004.1419244