A novel multi-channel field effect transistor (McFET) on bulk Si for high performance sub-80nm application

We demonstrate highly manufacturable double FinFET on bulk Si wafer, named multi-channel field effect transistor (McFET) for the high performance 80nm 144M SRAM. Twin fins are formed for each transistor using our newly developed simple process scheme. McFET with L/sub G/=80nm shows several excellent...

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Bibliographic Details
Main Authors: Sung Min Kim, Eun Jung Yoon, Hye Jin Jo, Ming Li, Chang Woo Oh, Sung Young Lee, Kyoung Hwan Yeo, Min Sang Kim, Sung Hwan Kim, Dong Uk Choe, Jeong Dong Choe, Sung Dae Suk, Dong-Won Kim, Donggun Park, Kinam Kim, Byung-Il Ryu
Format: Conference Proceeding
Language:English
Subjects:
Applied sciences
Design. Technologies. Operation analysis. Testing
Electrodes
Electronics
Etching
Exact sciences and technology
Fabrication
FETs
FinFETs
Immune system
Integrated circuits
Integrated circuits by function (including memories and processors)
Manufacturing processes
MOSFET circuits
Research and development
Semiconductor device manufacture
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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Summary:We demonstrate highly manufacturable double FinFET on bulk Si wafer, named multi-channel field effect transistor (McFET) for the high performance 80nm 144M SRAM. Twin fins are formed for each transistor using our newly developed simple process scheme. McFET with L/sub G/=80nm shows several excellent transistor characteristics, such as /spl sim/5 times higher drive current than planar MOSFET, ideal subthreshold swing of 60mV/dec, drain induced barrier lowering (DIBL) of 15mV/V without pocket implantation, and negligible body bias dependency, maintaining the same source/drain resistance as planar transistor due to the unique feature of McFET.
DOI:10.1109/IEDM.2004.1419247