Molybdenum gate HfO/sub 2/ CMOS FinFET technology

CMOS FinFETs with molybdenum gate and HfO/sub 2/ gate-dielectric are reported. By tuning the gate work function via nitrogen implantation and employing a narrow fin width, low values of threshold voltage (0.28/-0.17 V) and sub-threshold swing (67.5/62.5 mV/dec) were achieved. The use of HfO/sub 2/ r...

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Bibliographic Details
Main Authors: Daewon Ha, Takeuchi, H., Choi, Y.-K., King, T.-J., Bai, W.P., Kwong, D.L., Agarwal, A., Ameen, M.
Format: Conference Proceeding
Language:English
Subjects:
Charge carrier processes
Dielectrics
Electron mobility
FinFETs
Hafnium oxide
Leakage current
Nitrogen
Phonons
Temperature dependence
Threshold voltage
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Summary:CMOS FinFETs with molybdenum gate and HfO/sub 2/ gate-dielectric are reported. By tuning the gate work function via nitrogen implantation and employing a narrow fin width, low values of threshold voltage (0.28/-0.17 V) and sub-threshold swing (67.5/62.5 mV/dec) were achieved. The use of HfO/sub 2/ rather than SiO/sub 2/ as the gate dielectric reduces the gate leakage current density by several orders of magnitude, for EOT in the range 1.75-1.95 nm. The observed weak temperature dependence for both electron and hole mobilities (/spl mu//sub eff/ /spl sim/ T/sup -0.95/) is ascribed to soft phonon scattering.
DOI:10.1109/IEDM.2004.1419248