Sub-terahertz response of stressed and unstressed Ge:Ga photoconductive detectors

Ge:Ga is a widely used detector material for applications at terahertz frequencies. Its response ranges from about 40 /spl mu/m -120 /spl mu/m. If a compressive force is applied to the crystal the response shifts to about 100 /spl mu/m - 240 /spl mu/m. We report on a long wavelength, sub-terahertz r...

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Bibliographic Details
Main Authors: Hubers, H.-W., Pavlov, S.G., Holldack, K., Kuske, P., Schade, U., Wustefeld, G.
Format: Conference Proceeding
Language:English
Subjects:
Aerospace materials
Astronomy
Detectors
Frequency
Gallium
Germanium
Iris
Observatories
Photoconductivity
Stationary state
Online Access:Request full text
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Summary:Ge:Ga is a widely used detector material for applications at terahertz frequencies. Its response ranges from about 40 /spl mu/m -120 /spl mu/m. If a compressive force is applied to the crystal the response shifts to about 100 /spl mu/m - 240 /spl mu/m. We report on a long wavelength, sub-terahertz response >300 /spl mu/m. This response can be attributed to transitions from excited Ga states into the valence band. The results indicate that a cascade type of relaxation exists in Ge:Ga at 4.5 K.
DOI:10.1109/ICIMW.2004.1422097