Reliability evaluation of direct chip attached silicon carbide pressure transducers

An accelerated stress test (AST) protocol has been developed and used to evaluate the reliability of 6H-silicon carbide (SiC) pressure transducers for operation up to 400 /spl deg/C for 100 hours. After several cyclic excursions to 400 /spl deg/C, the maximum drift of the zero pressure offset voltag...

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Bibliographic Details
Main Authors: Okojie, R.S., Savrun, E., Phong Nguyen, Vu Nguyen, Blaha, C.
Format: Conference Proceeding
Language:English
Subjects:
Communication, education, history, and philosophy
Degradation
Diffusion bonding
Exact sciences and technology
General equipment and techniques
Glass
Instruments, apparatus, components and techniques common to several branches of physics and astronomy
Physics
Physics literature and publications
Protocols
Semiconductor device packaging
Sensors (chemical, optical, electrical, movement, gas, etc.)
remote sensing
Silicon carbide
Temperature sensors
Testing
Thermal stresses
Transducers
Online Access:Request full text
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Description
Summary:An accelerated stress test (AST) protocol has been developed and used to evaluate the reliability of 6H-silicon carbide (SiC) pressure transducers for operation up to 400 /spl deg/C for 100 hours. After several cyclic excursions to 400 /spl deg/C, the maximum drift of the zero pressure offset voltage at 25 /spl deg/C was 1.9 mV, while the maximum drift at 400 /spl deg/C was 2.0 mV. The full-scale sensitivity to pressure before and after the AST was 36.6 /spl mu/V/V/psi at 25 /spl deg/C and 20.5 /spl mu/V/V/psi at 400 /spl deg/C, with a maximum drift of /spl plusmn/1 /spl mu/V/V/psi. No systematic degradation of the zero pressure offset was observed.
DOI:10.1109/ICSENS.2004.1426246