Reliability evaluation of direct chip attached silicon carbide pressure transducers

• Main Authors: Okojie, R.S., Savrun, E., Phong Nguyen, Vu Nguyen, Blaha, C.
• Format: Conference Proceeding
• Language: English
• Subjects: Communication, education, history, and philosophy; Degradation; Diffusion bonding; Exact sciences and technology; General equipment and techniques; Glass; Instruments, apparatus, components and techniques common to several branches of physics and astronomy; Physics; Physics literature and publications; Protocols; Semiconductor device packaging; Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing; Silicon carbide; Temperature sensors; Testing; Thermal stresses; Transducers
• DOI: 10.1109/ICSENS.2004.1426246

An accelerated stress test (AST) protocol has been developed and used to evaluate the reliability of 6H-silicon carbide (SiC) pressure transducers for operation up to 400 /spl deg/C for 100 hours. After several cyclic excursions to 400 /spl deg/C, the maximum drift of the zero pressure offset voltage at 25 /spl deg/C was 1.9 mV, while the maximum drift at 400 /spl deg/C was 2.0 mV. The full-scale sensitivity to pressure before and after the AST was 36.6 /spl mu/V/V/psi at 25 /spl deg/C and 20.5 /spl mu/V/V/psi at 400 /spl deg/C, with a maximum drift of /spl plusmn/1 /spl mu/V/V/psi. No systematic degradation of the zero pressure offset was observed.