A Si-SiGe HBT dielectric-resonator-stabilized microstrip oscillator at X-band frequencies

Design, fabrication and performance of the first reported hybrid dielectric resonator oscillator (DRO) using an Si-SiGe heterojunction bipolar transistor (HBT) as the active device are described. The HBT with layer structures completely grown by MBE exhibits f/sub T/ and f/sub max/ values in the ran...

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Bibliographic Details
Published in:IEEE microwave and guided wave letters 1992-07, Vol.2 (7), p.281-283
Main Authors: Guttich, U., Gruhle, A., Luy, J.F.
Format: Article
Language:English
Subjects:
Circuits
Dielectrics
Frequency
Heterojunction bipolar transistors
Microstrip resonators
Microwave oscillators
Molecular beam epitaxial growth
Scattering parameters
Silicon on insulator technology
Substrates
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Summary:Design, fabrication and performance of the first reported hybrid dielectric resonator oscillator (DRO) using an Si-SiGe heterojunction bipolar transistor (HBT) as the active device are described. The HBT with layer structures completely grown by MBE exhibits f/sub T/ and f/sub max/ values in the range of 38 GHz. At 9.6 GHz, an oscillator output power of 10 mW with a conversion efficiency of 17.5% is measured. Phase noise N/C/sub FM/ of -85 dBc (1 Hz) is determined at 100 kHz off carrier.< >
ISSN:1051-8207
1558-2329
DOI:10.1109/75.143395