The use of extracted BSIM3v3 MOS parameters for quick manual design

This work describes a new methodology for the extraction of DC parameters from BSIM3v3 MOS transistors. It takes into account some short channel effects not considered in the simplified level 1 model, thus providing corrections for the traditional MOS transconductance equations g/sub m/ and g/sub o/...

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Bibliographic Details
Main Authors: de Carvalho Ferreira, L.H., Pimenta, T.C.
Format: Conference Proceeding
Language:English
Subjects:
Circuit simulation
CMOS process
Extraterrestrial measurements
Manufacturing processes
MOSFETs
Nonlinear equations
Semiconductor device modeling
SPICE
Transconductance
Vectors
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Summary:This work describes a new methodology for the extraction of DC parameters from BSIM3v3 MOS transistors. It takes into account some short channel effects not considered in the simplified level 1 model, thus providing corrections for the traditional MOS transconductance equations g/sub m/ and g/sub o/. The parameters are obtained using the minimum square method. The results show that the proposed method improves the precision of manual transistors' dimensions' calculations.
DOI:10.1109/ICM.2004.1434739