Scaling beyond conventional CMOS device

Conventional scaling is no longer effective to continue device performance trend because of technological difficulties in the scaling of key device parameters. In this paper, we discuss device scaling options beyond convention device structures. We discuss ultrathin body silicon on insulator (UTSOI)...

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Bibliographic Details
Main Authors: Meikei Ieong, Dons, B., Kedzierski, J., Zhibin Ren, Ken Rim, Min Yang, Huiling Shang
Format: Conference Proceeding
Language:English
Subjects:
CMOS technology
Doping
Electrostatics
Energy management
FinFETs
Integrated circuit technology
MOSFET circuits
Research and development
Silicon on insulator technology
Threshold voltage
Online Access:Request full text
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Summary:Conventional scaling is no longer effective to continue device performance trend because of technological difficulties in the scaling of key device parameters. In this paper, we discuss device scaling options beyond convention device structures. We discuss ultrathin body silicon on insulator (UTSOI) MOSFET and FinFET structures for improved electrostatic. We also discuss various mobility enhancement techniques including strained silicon on insulator (SGOI), strained silicon directly on insulator (SSDOI), and hybrid orientation technology (HOT).
DOI:10.1109/ICSICT.2004.1434948