Low energy implantation technology with molecular ion beam

One of the problems of the low acceleration ion implantation technology for ultra-shallow junction formation of 65nm/45nm node devices is the suppression of the energy contamination and the beam angle dispersion. In order to solve the problem, molecular ion beam (Decaborane ion beam) has been develo...

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Bibliographic Details
Main Authors: Tanjyo, M., Hamamoto, N., Umisedo, S., Nagayama, T., Sakai, S., Naito, M., Nagai, N., Aoyama, T., Nara, Y.
Format: Conference Proceeding
Language:English
Subjects:
Acceleration
Contamination
Dispersion
Ion beams
Ion implantation
Molecular beam applications
Molecular beams
Particle beams
Space charge
Space technology
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Summary:One of the problems of the low acceleration ion implantation technology for ultra-shallow junction formation of 65nm/45nm node devices is the suppression of the energy contamination and the beam angle dispersion. In order to solve the problem, molecular ion beam (Decaborane ion beam) has been developed. It is shown the molecular beam implantation can suppress the space charge effect and beam angle dispersion is suppressed to 1/10 times less than that of conventional single boron ion beam.
DOI:10.1109/ICSICT.2004.1435042