Can single electron effects be directly observed in Si quantum dots array at room temperature?

We report a direct observation of Coulomb blockade and quantum confinement effects in the room-temperature current-voltage (I-V) characteristics of Si quantum dots (Si-QDs) array (with a mean diameter of 6 nm), which is embedded in the SiO/sub 2//Si-QDs array/SiO/sub 2//n/sup +/-Si (100) structure a...

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Bibliographic Details
Main Authors: Yu, L.W., Chen, K.J., Wu, L.C., Dai, M., Li, W., Huang, X.F.
Format: Conference Proceeding
Language:English
Subjects:
Atomic force microscopy
Electrons
Oxidation
Plasma chemistry
Plasma confinement
Plasma temperature
Potential well
Quantum dots
Tunneling
US Department of Transportation
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Summary:We report a direct observation of Coulomb blockade and quantum confinement effects in the room-temperature current-voltage (I-V) characteristics of Si quantum dots (Si-QDs) array (with a mean diameter of 6 nm), which is embedded in the SiO/sub 2//Si-QDs array/SiO/sub 2//n/sup +/-Si (100) structure and elaborated in a plasma enhanced chemical vapor deposition (PECVD) system by layer-by-layer technique and in situ plasma oxidation. The I-V curve exhibits a "sharp-edged bulge-like" peak structure, which differs remarkably from the peaks and the staircases reported for the case of single QD. Moreover, quantum conductance phenomenon in the I-V characteristics has been found at the onsets of the peaks in the I-V characteristics.
DOI:10.1109/ICSICT.2004.1435090