MBE-based materials growth for high f/sub T/ SiGe HBT

In this paper, the technology of MBE-based materials growth for high cutoff frequency (f/sub T/) SiGe HBTs was described. To grow a high-performance SiGe/Si hetero-junction multiple-structure, technologies such as the doping of secondary implantation (DSI), low-temperature doping, and antimony (Sb)...

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Bibliographic Details
Main Authors: Zhang Jing, Li Kaicheng, Kibbel, H., Gruhle, A., Koenig, U., Rongkan, L., Liu Daoguang, Liu Luncai, Li Rongqiang, He Kaiquan, Xu Wanjing
Format: Conference Proceeding
Language:English
Subjects:
Chemical technology
Circuits
Cleaning
Cutoff frequency
Doping
Germanium silicon alloys
Heterojunction bipolar transistors
Lattices
Molecular beam epitaxial growth
Silicon germanium
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Summary:In this paper, the technology of MBE-based materials growth for high cutoff frequency (f/sub T/) SiGe HBTs was described. To grow a high-performance SiGe/Si hetero-junction multiple-structure, technologies such as the doping of secondary implantation (DSI), low-temperature doping, and antimony (Sb) surface pre-deposition, have been presented in the course of molecular beam epitaxy (MBE). The cutoff frequency of a mesa SiGe HBT, which was developed by using a SiGe/Si hetero-junction multi-structure, reached 105 GHz. In addition, key technologies such as the wafer surface pre-treatment before epitaxial growth, the temperature control of SiGe layer growth, etc., were introduced in detail.
DOI:10.1109/ICSICT.2004.1435271