Influence of fluorine on radiation-induced charge trapping in the SIMOX buried oxides

Charge trapping in the fluorinated SIMOX buried oxides before and after ionizing radiation has been investigated by means of C-V characteristics. Radiation-induced positive charge trapping which results in negative shift of C-V curves can be restrained by implanting fluorine ions into the SIMOX buri...

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Bibliographic Details
Main Authors: Guoqiang Zhang, Zhongli Liu, Ning Li, Zhongshan Zhen, Guohua Li
Format: Conference Proceeding
Language:English
Subjects:
Annealing
Area measurement
Capacitance measurement
Capacitance-voltage characteristics
Charge measurement
Current measurement
Electron traps
Ionizing radiation
Performance evaluation
Silicon on insulator technology
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Summary:Charge trapping in the fluorinated SIMOX buried oxides before and after ionizing radiation has been investigated by means of C-V characteristics. Radiation-induced positive charge trapping which results in negative shift of C-V curves can be restrained by implanting fluorine ions into the SIMOX buried oxides. Pre-radiation charge trapping is suppressed in the fluorinated buried oxides. The fluorine dose and post-implantation anneal time play a very important role in the control of charge trapping.
DOI:10.1109/ICSICT.2004.1436640