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Influence of fluorine on radiation-induced charge trapping in the SIMOX buried oxides

Charge trapping in the fluorinated SIMOX buried oxides before and after ionizing radiation has been investigated by means of C-V characteristics. Radiation-induced positive charge trapping which results in negative shift of C-V curves can be restrained by implanting fluorine ions into the SIMOX buri...

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Main Authors: Guoqiang Zhang, Zhongli Liu, Ning Li, Zhongshan Zhen, Guohua Li
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Language:English
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Zhongli Liu
Ning Li
Zhongshan Zhen
Guohua Li
description Charge trapping in the fluorinated SIMOX buried oxides before and after ionizing radiation has been investigated by means of C-V characteristics. Radiation-induced positive charge trapping which results in negative shift of C-V curves can be restrained by implanting fluorine ions into the SIMOX buried oxides. Pre-radiation charge trapping is suppressed in the fluorinated buried oxides. The fluorine dose and post-implantation anneal time play a very important role in the control of charge trapping.
doi_str_mv 10.1109/ICSICT.2004.1436640
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source IEEE Electronic Library (IEL) Conference Proceedings
subjects Annealing
Area measurement
Capacitance measurement
Capacitance-voltage characteristics
Charge measurement
Current measurement
Electron traps
Ionizing radiation
Performance evaluation
Silicon on insulator technology
title Influence of fluorine on radiation-induced charge trapping in the SIMOX buried oxides
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