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Influence of fluorine on radiation-induced charge trapping in the SIMOX buried oxides
Charge trapping in the fluorinated SIMOX buried oxides before and after ionizing radiation has been investigated by means of C-V characteristics. Radiation-induced positive charge trapping which results in negative shift of C-V curves can be restrained by implanting fluorine ions into the SIMOX buri...
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container_end_page | 850 vol.2 |
container_issue | |
container_start_page | 847 |
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container_volume | 2 |
creator | Guoqiang Zhang Zhongli Liu Ning Li Zhongshan Zhen Guohua Li |
description | Charge trapping in the fluorinated SIMOX buried oxides before and after ionizing radiation has been investigated by means of C-V characteristics. Radiation-induced positive charge trapping which results in negative shift of C-V curves can be restrained by implanting fluorine ions into the SIMOX buried oxides. Pre-radiation charge trapping is suppressed in the fluorinated buried oxides. The fluorine dose and post-implantation anneal time play a very important role in the control of charge trapping. |
doi_str_mv | 10.1109/ICSICT.2004.1436640 |
format | conference_proceeding |
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Radiation-induced positive charge trapping which results in negative shift of C-V curves can be restrained by implanting fluorine ions into the SIMOX buried oxides. Pre-radiation charge trapping is suppressed in the fluorinated buried oxides. The fluorine dose and post-implantation anneal time play a very important role in the control of charge trapping.</description><identifier>ISBN: 078038511X</identifier><identifier>ISBN: 9780780385115</identifier><identifier>DOI: 10.1109/ICSICT.2004.1436640</identifier><language>eng</language><publisher>IEEE</publisher><subject>Annealing ; Area measurement ; Capacitance measurement ; Capacitance-voltage characteristics ; Charge measurement ; Current measurement ; Electron traps ; Ionizing radiation ; Performance evaluation ; Silicon on insulator technology</subject><ispartof>Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004, 2004, Vol.2, p.847-850 vol.2</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1436640$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2058,4050,4051,27925,54920</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1436640$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Guoqiang Zhang</creatorcontrib><creatorcontrib>Zhongli Liu</creatorcontrib><creatorcontrib>Ning Li</creatorcontrib><creatorcontrib>Zhongshan Zhen</creatorcontrib><creatorcontrib>Guohua Li</creatorcontrib><title>Influence of fluorine on radiation-induced charge trapping in the SIMOX buried oxides</title><title>Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004</title><addtitle>ICSICT</addtitle><description>Charge trapping in the fluorinated SIMOX buried oxides before and after ionizing radiation has been investigated by means of C-V characteristics. Radiation-induced positive charge trapping which results in negative shift of C-V curves can be restrained by implanting fluorine ions into the SIMOX buried oxides. Pre-radiation charge trapping is suppressed in the fluorinated buried oxides. The fluorine dose and post-implantation anneal time play a very important role in the control of charge trapping.</description><subject>Annealing</subject><subject>Area measurement</subject><subject>Capacitance measurement</subject><subject>Capacitance-voltage characteristics</subject><subject>Charge measurement</subject><subject>Current measurement</subject><subject>Electron traps</subject><subject>Ionizing radiation</subject><subject>Performance evaluation</subject><subject>Silicon on insulator technology</subject><isbn>078038511X</isbn><isbn>9780780385115</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2004</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><recordid>eNotj8tqwzAURAWl0DbNF2SjH7B79Yy1LKYPQ0IWSSC7IEtXiUoqG9mB9u9raGYzZ3EYGEIWDErGwLw09bapdyUHkCWTQmsJd-QJlhWISjF2eCDzYfiCKcJoZfgj2TcpXK6YHNIu0Am7HNPEiWbrox1jl4qY_NWhp-5s8wnpmG3fx3SiMdHxjHTbrDcH2l5znJzuJ3ocnsl9sJcB57eekf37267-LFabj6Z-XRWRgRoL0QaljNII0gLXDgG0l86H4NFIEdxStq3wlnFeAa-4ZC1YoSsbmBMcjJiRxf9uRMRjn-O3zb_H23PxB68dT38</recordid><startdate>2004</startdate><enddate>2004</enddate><creator>Guoqiang Zhang</creator><creator>Zhongli Liu</creator><creator>Ning Li</creator><creator>Zhongshan Zhen</creator><creator>Guohua Li</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>2004</creationdate><title>Influence of fluorine on radiation-induced charge trapping in the SIMOX buried oxides</title><author>Guoqiang Zhang ; Zhongli Liu ; Ning Li ; Zhongshan Zhen ; Guohua Li</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i105t-3bf55956e04a026ce006d4cdffde943fc74bb3da1228028241b0a368af1c32093</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2004</creationdate><topic>Annealing</topic><topic>Area measurement</topic><topic>Capacitance measurement</topic><topic>Capacitance-voltage characteristics</topic><topic>Charge measurement</topic><topic>Current measurement</topic><topic>Electron traps</topic><topic>Ionizing radiation</topic><topic>Performance evaluation</topic><topic>Silicon on insulator technology</topic><toplevel>online_resources</toplevel><creatorcontrib>Guoqiang Zhang</creatorcontrib><creatorcontrib>Zhongli Liu</creatorcontrib><creatorcontrib>Ning Li</creatorcontrib><creatorcontrib>Zhongshan Zhen</creatorcontrib><creatorcontrib>Guohua Li</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Xplore</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Guoqiang Zhang</au><au>Zhongli Liu</au><au>Ning Li</au><au>Zhongshan Zhen</au><au>Guohua Li</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Influence of fluorine on radiation-induced charge trapping in the SIMOX buried oxides</atitle><btitle>Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004</btitle><stitle>ICSICT</stitle><date>2004</date><risdate>2004</risdate><volume>2</volume><spage>847</spage><epage>850 vol.2</epage><pages>847-850 vol.2</pages><isbn>078038511X</isbn><isbn>9780780385115</isbn><abstract>Charge trapping in the fluorinated SIMOX buried oxides before and after ionizing radiation has been investigated by means of C-V characteristics. Radiation-induced positive charge trapping which results in negative shift of C-V curves can be restrained by implanting fluorine ions into the SIMOX buried oxides. Pre-radiation charge trapping is suppressed in the fluorinated buried oxides. The fluorine dose and post-implantation anneal time play a very important role in the control of charge trapping.</abstract><pub>IEEE</pub><doi>10.1109/ICSICT.2004.1436640</doi></addata></record> |
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ispartof | Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004, 2004, Vol.2, p.847-850 vol.2 |
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language | eng |
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source | IEEE Electronic Library (IEL) Conference Proceedings |
subjects | Annealing Area measurement Capacitance measurement Capacitance-voltage characteristics Charge measurement Current measurement Electron traps Ionizing radiation Performance evaluation Silicon on insulator technology |
title | Influence of fluorine on radiation-induced charge trapping in the SIMOX buried oxides |
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