BSIM5 MOSFET Model

This paper summarizes BSIM5 MOSFET model for aggressively scaled CMOS technology which was released recently. Various new physical effects are timely addressed in the new physical core including more accurate physics that is easily extended to non-charge-sheet, completely continuous current and deri...

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Bibliographic Details
Main Authors: Xuemei Jane Xi, Jin He, Mohan Dunga, Hui Wan, Chan, Mansun, Chung-Hsun Lin, Babak Heydari, Niknejad, A.M., Chenming Hu
Format: Conference Proceeding
Language:English
Subjects:
CMOS technology
Electronics industry
Helium
Hydrodynamics
Manufacturing industries
MOSFET circuits
Physics
Radio frequency
Semiconductor device manufacture
Semiconductor device modeling
Online Access:Request full text
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Summary:This paper summarizes BSIM5 MOSFET model for aggressively scaled CMOS technology which was released recently. Various new physical effects are timely addressed in the new physical core including more accurate physics that is easily extended to non-charge-sheet, completely continuous current and derivatives, and extendibility to non-traditional CMOS based devices including SOI and double-gate MOSFETs. The flexible architecture also enables the carry-over of BSFM4's accurate modeling of numerous device behaviors attributable to device physics or technologies.
DOI:10.1109/ICSICT.2004.1436657