Study of breakdown dynamics in InAlAs/InGaAs/InP HEMTs with gate length scaling down to 80 nm

In this paper we present the correlation between the impact ionization gate current with the S/sub 22/ scattering parameter measured in the 50 MHz - 6 GHz frequency range in InAlAs/InGaAs/InP HEMTs. Devices with shorter gate length presenting larger I.I. gate current have shown larger inductive comp...

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Bibliographic Details
Main Authors: Pierobon, R., Rampazzo, F., Clonfero, F., De Pellegrin, T., Bertazzo, M., Meneghesso, G., Zanoni, E., Suemitsu, T., Enoki, T.
Format: Conference Proceeding
Language:English
Subjects:
Current measurement
Electric breakdown
Frequency
HEMTs
Impact ionization
Indium compounds
Indium gallium arsenide
Indium phosphide
MODFETs
Scattering parameters
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Summary:In this paper we present the correlation between the impact ionization gate current with the S/sub 22/ scattering parameter measured in the 50 MHz - 6 GHz frequency range in InAlAs/InGaAs/InP HEMTs. Devices with shorter gate length presenting larger I.I. gate current have shown larger inductive component in the output admittance Y/sub 22/ at low frequencies.
ISSN:1092-8669
DOI:10.1109/ICIPRM.2004.1442802