A unipolar structure applying lateral diffusion

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Bibliographic Details
Published in:Proceedings of the IEEE 1963-01, Vol.51 (7), p.1059-1060
Main Authors: Roosild, S.A., Dolan, R.P., O'Neil, D.
Format: Article
Language:English
Subjects:
Aerospace materials
Boron
Capacitance
Doppler radar
Etching
Fabrication
FETs
Lead compounds
Silicon devices
Strips
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ISSN:0018-9219
DOI:10.1109/PROC.1963.2425