L-band epitaxial Gunn oscillators

Gunn oscillators have been made from epitaxially grown GaAs n + -n-n + "sandwich" structures. Peak powers up to 56 watts have been obtained in L-band with an efficiency of 15 percent. The positive temperature coefficient of resistance of the epitaxial material provides a built-in protectio...

Full description

Saved in:
Bibliographic Details
Published in:Proceedings of the IEEE 1967-01, Vol.55 (6), p.1078-1078
Main Authors: Berson, B.E., Narayan, S.Y.
Format: Article
Language:English
Subjects:
Gallium arsenide
Gunn devices
L-band
Ohmic contacts
Oscillators
Packaging
Protection
Radio frequency
Stability
Temperature
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Gunn oscillators have been made from epitaxially grown GaAs n + -n-n + "sandwich" structures. Peak powers up to 56 watts have been obtained in L-band with an efficiency of 15 percent. The positive temperature coefficient of resistance of the epitaxial material provides a built-in protection against thermal runaway.
ISSN:0018-9219
DOI:10.1109/PROC.1967.5726