L-band epitaxial Gunn oscillators

Gunn oscillators have been made from epitaxially grown GaAs n + -n-n + "sandwich" structures. Peak powers up to 56 watts have been obtained in L-band with an efficiency of 15 percent. The positive temperature coefficient of resistance of the epitaxial material provides a built-in protectio...

Full description

Saved in:
Bibliographic Details
Published in:Proceedings of the IEEE 1967-01, Vol.55 (6), p.1078-1078
Main Authors: Berson, B.E., Narayan, S.Y.
Format: Article
Language:English
Subjects:
Gallium arsenide
Gunn devices
L-band
Ohmic contacts
Oscillators
Packaging
Protection
Radio frequency
Stability
Temperature
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by
cites
container_end_page 1078
container_issue 6
container_start_page 1078
container_title Proceedings of the IEEE
container_volume 55
creator Berson, B.E.
Narayan, S.Y.
description Gunn oscillators have been made from epitaxially grown GaAs n + -n-n + "sandwich" structures. Peak powers up to 56 watts have been obtained in L-band with an efficiency of 15 percent. The positive temperature coefficient of resistance of the epitaxial material provides a built-in protection against thermal runaway.
doi_str_mv 10.1109/PROC.1967.5726
format article
fullrecord <record><control><sourceid>crossref_ieee_</sourceid><recordid>TN_cdi_ieee_primary_1447656</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>1447656</ieee_id><sourcerecordid>10_1109_PROC_1967_5726</sourcerecordid><originalsourceid>FETCH-LOGICAL-c214t-3748dba1abef835efb936b40032acc575dd6524072f4c9889e95b49a930ca5ac3</originalsourceid><addsrcrecordid>eNpFz0tLxDAUBeAsFBxHt27c1B_QmvdjKUVnhMKI6DrcpAlEajskFfTf2zKCq7M5514-hG4IbgjB5v7l9dA2xEjVCEXlGdpgTHRtKDEX6LKUD4wxE5Jt0F1XOxj7KhzTDN8Jhmr3NY7VVHwaBpinXK7QeYShhOu_3KL3p8e3dl93h91z-9DVnhI-10xx3Tsg4ELUTIToDJOOL38oeC-U6HspKMeKRu6N1iYY4bgBw7AHAZ5tUXO66_NUSg7RHnP6hPxjCbYryq4ou6LsiloGt6dBCiH8lzlXcqH9AsSQSWU</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>L-band epitaxial Gunn oscillators</title><source>IEEE Electronic Library (IEL) Journals</source><creator>Berson, B.E. ; Narayan, S.Y.</creator><creatorcontrib>Berson, B.E. ; Narayan, S.Y.</creatorcontrib><description>Gunn oscillators have been made from epitaxially grown GaAs n + -n-n + "sandwich" structures. Peak powers up to 56 watts have been obtained in L-band with an efficiency of 15 percent. The positive temperature coefficient of resistance of the epitaxial material provides a built-in protection against thermal runaway.</description><identifier>ISSN: 0018-9219</identifier><identifier>DOI: 10.1109/PROC.1967.5726</identifier><identifier>CODEN: IEEPAD</identifier><language>eng</language><publisher>IEEE</publisher><subject>Gallium arsenide ; Gunn devices ; L-band ; Ohmic contacts ; Oscillators ; Packaging ; Protection ; Radio frequency ; Stability ; Temperature</subject><ispartof>Proceedings of the IEEE, 1967-01, Vol.55 (6), p.1078-1078</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1447656$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,27924,27925,54796</link.rule.ids></links><search><creatorcontrib>Berson, B.E.</creatorcontrib><creatorcontrib>Narayan, S.Y.</creatorcontrib><title>L-band epitaxial Gunn oscillators</title><title>Proceedings of the IEEE</title><addtitle>JPROC</addtitle><description>Gunn oscillators have been made from epitaxially grown GaAs n + -n-n + "sandwich" structures. Peak powers up to 56 watts have been obtained in L-band with an efficiency of 15 percent. The positive temperature coefficient of resistance of the epitaxial material provides a built-in protection against thermal runaway.</description><subject>Gallium arsenide</subject><subject>Gunn devices</subject><subject>L-band</subject><subject>Ohmic contacts</subject><subject>Oscillators</subject><subject>Packaging</subject><subject>Protection</subject><subject>Radio frequency</subject><subject>Stability</subject><subject>Temperature</subject><issn>0018-9219</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1967</creationdate><recordtype>article</recordtype><recordid>eNpFz0tLxDAUBeAsFBxHt27c1B_QmvdjKUVnhMKI6DrcpAlEajskFfTf2zKCq7M5514-hG4IbgjB5v7l9dA2xEjVCEXlGdpgTHRtKDEX6LKUD4wxE5Jt0F1XOxj7KhzTDN8Jhmr3NY7VVHwaBpinXK7QeYShhOu_3KL3p8e3dl93h91z-9DVnhI-10xx3Tsg4ELUTIToDJOOL38oeC-U6HspKMeKRu6N1iYY4bgBw7AHAZ5tUXO66_NUSg7RHnP6hPxjCbYryq4ou6LsiloGt6dBCiH8lzlXcqH9AsSQSWU</recordid><startdate>19670101</startdate><enddate>19670101</enddate><creator>Berson, B.E.</creator><creator>Narayan, S.Y.</creator><general>IEEE</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19670101</creationdate><title>L-band epitaxial Gunn oscillators</title><author>Berson, B.E. ; Narayan, S.Y.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c214t-3748dba1abef835efb936b40032acc575dd6524072f4c9889e95b49a930ca5ac3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1967</creationdate><topic>Gallium arsenide</topic><topic>Gunn devices</topic><topic>L-band</topic><topic>Ohmic contacts</topic><topic>Oscillators</topic><topic>Packaging</topic><topic>Protection</topic><topic>Radio frequency</topic><topic>Stability</topic><topic>Temperature</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Berson, B.E.</creatorcontrib><creatorcontrib>Narayan, S.Y.</creatorcontrib><collection>CrossRef</collection><jtitle>Proceedings of the IEEE</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Berson, B.E.</au><au>Narayan, S.Y.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>L-band epitaxial Gunn oscillators</atitle><jtitle>Proceedings of the IEEE</jtitle><stitle>JPROC</stitle><date>1967-01-01</date><risdate>1967</risdate><volume>55</volume><issue>6</issue><spage>1078</spage><epage>1078</epage><pages>1078-1078</pages><issn>0018-9219</issn><coden>IEEPAD</coden><abstract>Gunn oscillators have been made from epitaxially grown GaAs n + -n-n + "sandwich" structures. Peak powers up to 56 watts have been obtained in L-band with an efficiency of 15 percent. The positive temperature coefficient of resistance of the epitaxial material provides a built-in protection against thermal runaway.</abstract><pub>IEEE</pub><doi>10.1109/PROC.1967.5726</doi><tpages>1</tpages></addata></record>
fulltext fulltext
identifier ISSN: 0018-9219
ispartof Proceedings of the IEEE, 1967-01, Vol.55 (6), p.1078-1078
issn 0018-9219
language eng
recordid cdi_ieee_primary_1447656
source IEEE Electronic Library (IEL) Journals
subjects Gallium arsenide
Gunn devices
L-band
Ohmic contacts
Oscillators
Packaging
Protection
Radio frequency
Stability
Temperature
title L-band epitaxial Gunn oscillators
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-04T17%3A59%3A08IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref_ieee_&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=L-band%20epitaxial%20Gunn%20oscillators&rft.jtitle=Proceedings%20of%20the%20IEEE&rft.au=Berson,%20B.E.&rft.date=1967-01-01&rft.volume=55&rft.issue=6&rft.spage=1078&rft.epage=1078&rft.pages=1078-1078&rft.issn=0018-9219&rft.coden=IEEPAD&rft_id=info:doi/10.1109/PROC.1967.5726&rft_dat=%3Ccrossref_ieee_%3E10_1109_PROC_1967_5726%3C/crossref_ieee_%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c214t-3748dba1abef835efb936b40032acc575dd6524072f4c9889e95b49a930ca5ac3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=1447656&rfr_iscdi=true