A Gunn diode operated in the hybrid mode

A new mode of operation of Gunn devices is reported. The theoretical model is described from which the efficiency and negative RF conductance are calculated. Theoretical results show that this "hybrid mode" has broad-band characteristics and insensitivity to load. Good agreement between th...

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Bibliographic Details
Published in:Proceedings of the IEEE 1968, Vol.56 (7), p.1232-1233
Main Authors: Ho-Chung Huang, MacKenzie, L.A.
Format: Article
Language:English
Subjects:
Circuits
Diodes
Doping
Gallium arsenide
Gunn devices
Radio frequency
Space charge
Voltage
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Description
Summary:A new mode of operation of Gunn devices is reported. The theoretical model is described from which the efficiency and negative RF conductance are calculated. Theoretical results show that this "hybrid mode" has broad-band characteristics and insensitivity to load. Good agreement between theory and experiment indicates the existence of this mode.
ISSN:0018-9219
DOI:10.1109/PROC.1968.6537