Further comments on "Comparison of the neutron radiation tolerance of bipolar and junction field effect transistors"

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Bibliographic Details
Published in:Proceedings of the IEEE 1969-01, Vol.57 (1), p.109-110
Main Authors: Messenger, G.C., Buchanan, B., Dolan, R., Roosild, S.
Format: Article
Language:English
Subjects:
Bipolar transistors
Conductivity
Equations
Error analysis
Failure analysis
FETs
Germanium
Iron
Neutrons
Voltage
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ISSN:0018-9219
1558-2256
DOI:10.1109/PROC.1969.6900