High efficiency X-band Gunn oscillators

Experimental results are reported for X-band Gunn devices operated in the hybrid mode of Huang and MacKenzie. The high efficiency observed on one diode (22 percent at 19.15 W of peak power) is, to the best of our knowledge, the highest reported in this frequency range. Comparison of our results with...

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Bibliographic Details
Published in:Proceedings of the IEEE 1969-01, Vol.57 (2), p.251-252
Main Author: Califano, F.P.
Format: Article
Language:English
Subjects:
Anodes
Electron mobility
Gallium arsenide
Gold
Gunn devices
Indium
Microwave devices
Oscillators
Protection
Testing
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Summary:Experimental results are reported for X-band Gunn devices operated in the hybrid mode of Huang and MacKenzie. The high efficiency observed on one diode (22 percent at 19.15 W of peak power) is, to the best of our knowledge, the highest reported in this frequency range. Comparison of our results with theoretical calculations by Huang and MacKenzie is made.
ISSN:0018-9219
1558-2256
DOI:10.1109/PROC.1969.6951