Ultrathin oxide-nitride dielectrics for rugged stacked DRAM capacitors

Ultrathin dielectric materials that provide high capacitance values are needed for 64- and 256-Mb stacked DRAMs. It is shown that capacitance values as high as 12.3 fF/ mu m/sup 2/ can be obtained with ultrathin nitride-based layers deposited on rugged polysilicon storage electrodes. These films pre...

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Bibliographic Details
Published in:IEEE electron device letters 1992-02, Vol.13 (2), p.86-88
Main Authors: Fazan, P.C., Mathews, V.K., Chan, H.C., Ditali, A.
Format: Article
Language:English
Subjects:
Applied sciences
Capacitance
Capacitors
Degradation
Dielectric materials
Dielectric thin films
Electrodes
Electronics
Exact sciences and technology
Leakage current
Manufacturing
Material storage
Random access memory
Storage and reproduction of information
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Summary:Ultrathin dielectric materials that provide high capacitance values are needed for 64- and 256-Mb stacked DRAMs. It is shown that capacitance values as high as 12.3 fF/ mu m/sup 2/ can be obtained with ultrathin nitride-based layers deposited on rugged polysilicon storage electrodes. These films present the reliability and low leakage current levels required for 3.3-V applications. The nitride thickness, however, cannot be scaled much below 6 nm to avoid the oxidation-punchthrough mechanisms that appear when too-thin films are unable to withstand the reoxidation step.< >
ISSN:0741-3106
1558-0563
DOI:10.1109/55.144967