On the gate current and noise behavior in pinched-off silicon junction field-effect transistors

An exponential relation between the gate current of the silicon junction FET and the drain applied voltage is obtained experimentally. It is found that the noise enhancement and input impedance decrease of this device starts at a point corresponding to the appearance of the gate floating potential w...

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Bibliographic Details
Published in:Proceedings of the IEEE 1970-01, Vol.58 (7), p.1158-1159
Main Authors: Nakahara, M., Kobayashi, I.
Format: Article
Language:English
Subjects:
Current measurement
FETs
Germanium
Impact ionization
Impedance
JFETs
Noise figure
Semiconductor device noise
Silicon
Voltage
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Description
Summary:An exponential relation between the gate current of the silicon junction FET and the drain applied voltage is obtained experimentally. It is found that the noise enhancement and input impedance decrease of this device starts at a point corresponding to the appearance of the gate floating potential which is related to the gate current.
ISSN:0018-9219
DOI:10.1109/PROC.1970.7878