Bulk switching of an amorphous semiconductor

Bulk switching of a Si 3 Ge 4 As 38 Te 55 amorphous semiconductor is reported. Even though the contacts are separated by 1 mm, a delay time of only 10 µs is observed. This is attributed to an active region of only 0.1-mm thickness near the positive electrode. The threshold voltage is 250 volts at ro...

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Bibliographic Details
Published in:Proceedings of the IEEE 1970-01, Vol.58 (11), p.1852-1852
Main Authors: Haden, C.R., Stone, J.L., Linder, J.S.
Format: Article
Language:English
Subjects:
Amorphous materials
Amorphous semiconductors
Conductors
Delay effects
Electrodes
Glass
Semiconductivity
Space vector pulse width modulation
Temperature
Threshold voltage
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Description
Summary:Bulk switching of a Si 3 Ge 4 As 38 Te 55 amorphous semiconductor is reported. Even though the contacts are separated by 1 mm, a delay time of only 10 µs is observed. This is attributed to an active region of only 0.1-mm thickness near the positive electrode. The threshold voltage is 250 volts at room temperature.
ISSN:0018-9219
1558-2256
DOI:10.1109/PROC.1970.8035