Ion-implanted complementary IMPATT diodes for D-band

Complementary silicon single-drift-region IMPATT diodes designed to operate above 100 GHz have been fabricated with ion-implanted dopant profiles. Continuous-wave output powers of 140 mW with 2.8-percent conversion efficiencies were obtained at 142 GHz.

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Bibliographic Details
Published in:Proceedings of the IEEE 1974-01, Vol.62 (9), p.1295-1296
Main Authors: Lee, D.H., Ying, R.S.
Format: Article
Language:English
Subjects:
Acceleration
Boron
Communication system control
Diodes
Eigenvalues and eigenfunctions
Epitaxial layers
Equations
Estimation theory
Silicon
Substrates
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Description
Summary:Complementary silicon single-drift-region IMPATT diodes designed to operate above 100 GHz have been fabricated with ion-implanted dopant profiles. Continuous-wave output powers of 140 mW with 2.8-percent conversion efficiencies were obtained at 142 GHz.
ISSN:0018-9219
1558-2256
DOI:10.1109/PROC.1974.9620